FDD5690 mosfet equivalent, n-channel mosfet.
30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V
RDS(ON) = 0.032 Ω @ VGS = 6 V.
Low gate charge (23nC typical). Fast switching speed. High performance trench technology .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOS.
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